METHOD FOR FORMING COPPER METAL LINE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

A method for forming a copper line and a semiconductor device with the copper line are provided to reduce fabrication costs by using an aluminium film as an electroplating seed layer of the copper line and a titanium based metal film as a barrier metal of the copper line. A nitride layer(20) and an oxide layer(30) are sequentially formed on a lower metal line of a substrate(10). A via hole(31) for exposing the nitride layer to the outside is formed through the oxide layer. A photoresist layer is formed in the via hole. A trench(32) is formed on the via hole by removing selectively the oxide layer. The photoresist layer is removed from the via hole. The nitride layer is removed from the resultant structure through the via hole. A barrier metal(50) made of a titanium based metal film is formed along an inner surface of the dual damascene pattern composed of the via hole and the trench. An aluminium film(60) is formed on the barrier metal as a seed layer.