| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas introducing device capable of forming a thin film of a compound semiconductor of good quality on a substrate, by supplying a plurality of raw material gases to the surface of the substrate without disordering a gas flow. SOLUTION: The gas introducing device 21 which supplies the raw material gases for forming the thin film on the surface of the substrate 22 has a top plate 23 and a bottom plate 24 provided opposite each other. The device includes a gas introduction pipe 27 which forms a flow passage where the plurality of raw material gases flow; and a partition plate 28 which is provided extending in the gas introduction pipe 27 in the raw material flow direction and in parallel to the top plate 23, to partition the space in the gas introduction pipe 27 into a first flow passage 31 and a second flow passage 32 up to a halfway point of the length in the raw material gas flow direction. The gas introduction device 21 is so constituted that the height of a confluence flow passage 34 where the first and second flow passages 31 and 32 join together beyond the front end of the partition plate 28 in the raw material gas flow direction is less than the sum of heights of the first and second flow passages 31 and 32. COPYRIGHT: (C)2007,JPO&INPIT
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