发明名称 SUBSTRATE TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To improve uniformity of flow rate distribution of treatment gas also to a substrate in any portion inside a treatment chamber in a substrate treatment device. SOLUTION: The device has a treatment chamber 201 for storing a required number of substrates which are laminated and mounted, a gas nozzle 17 which supplies treatment gas to the treatment chamber and extends in a lamination direction of the substrate, and an exhaust means 240 for exhausting the treatment chamber. The gas nozzle has a plurality of gas supply holes 248c along the lamination direction, and one or more gas supply holes are provided in a direction intersecting with the lamination direction. An internal angle of adjacent gas supply holes is set at 0°to a prescribed angle, and the internal angle is set at an angle of 2 or more in the lamination direction. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007027425(A) 申请公布日期 2007.02.01
申请号 JP20050207631 申请日期 2005.07.15
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKAGAWA TAKASHI;TOYODA KAZUYUKI;SATO TAKETOSHI;HOTTA HIDEKI;HASEGAWA MITSURU
分类号 H01L21/31;C23C16/455;H01L21/22;H01L21/324 主分类号 H01L21/31
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