发明名称 Dual conversion gain gate and capacitor combination
摘要 A pixel cell array architecture having a dual conversion gain. A dual conversion gain element is coupled between a floating diffusion region and a respective storage capacitor. The dual conversion gain element having a control gate switches in the capacitance of the capacitor to change the conversion gain of the floating diffusion region from a first conversion gain to a second conversion gain. In order to increase the efficient use of space, the dual conversion gain element gate also functions as the bottom plate of the capacitor. In one particular embodiment of the invention, a high dynamic range transistor is used in conjunction with a pixel cell having a capacitor-DCG gate combination; in another embodiment, adjacent pixels share pixel components, including the capacitor-DCG combination.
申请公布号 US2007023798(A1) 申请公布日期 2007.02.01
申请号 US20050193322 申请日期 2005.08.01
申请人 MICRON TECHNOLOGY, INC. 发明人 MCKEE JEFFREY A.
分类号 H01L31/113 主分类号 H01L31/113
代理机构 代理人
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