Chemical mechanical polishing apparatus and a method for planarizing/polishing a surface

摘要

The present invention provides a method for planarizing/polishing a surface, a method for manufacturing an integrated circuit and a chemical mechanical polishing apparatus. The method for planarizing/polishing a surface, among other elements, includes providing a chemical mechanical polishing apparatus ( 200, 300, 400 ) having a polishing platen ( 210, 310, 410 ), a carrier head ( 220, 320, 420 ) positioned over the polishing platen ( 210, 310, 410 ), and a slurry delivery source ( 230, 330, 430 ) positioned over and off center the polishing platen ( 210, 310, 410 ), and rotating the polishing platen ( 210, 310, 410 ) in a direction (R_p2, R_p3, R_p4) such that slurry exiting the slurry delivery source ( 230, 330, 430 ) and contacting the polishing platen ( 210, 310, 410 ) must rotate an angle (theta₂, theta₃, theta₄) less than about 220 degrees before contacting a polishable surface maintained by the carrier head ( 220, 320, 420 ).