发明名称 Method for plasma etching performance enhancement
摘要 A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.
申请公布号 US2007026677(A1) 申请公布日期 2007.02.01
申请号 US20060508725 申请日期 2006.08.22
申请人 LAM RESEARCH CORPORATION 发明人 JI BING;EDELBERG ERIK A.;YANAGAWA TAKUMI;HUANG ZHISONG;LI LUMIN
分类号 H01L21/302 主分类号 H01L21/302
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