发明名称 |
Method for plasma etching performance enhancement |
摘要 |
A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.
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申请公布号 |
US2007026677(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060508725 |
申请日期 |
2006.08.22 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
JI BING;EDELBERG ERIK A.;YANAGAWA TAKUMI;HUANG ZHISONG;LI LUMIN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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