发明名称 Operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
摘要 An operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof are provided. The present invention reduces the time needed for filling the manufacturing gas into the large volume manufacturing cavity. Therefore, the plasma enhanced atomic layer deposition apparatus can switch the precursors rapidly to increase the thin film deposition rate, reduce the manufacturing gas consumption and lower the manufacturing cost.
申请公布号 US2007026162(A1) 申请公布日期 2007.02.01
申请号 US20050244040 申请日期 2005.10.06
申请人 WEI HUNG-WEN;TING HUNG-CHE 发明人 WEI HUNG-WEN;TING HUNG-CHE
分类号 H05H1/24;C23C16/00 主分类号 H05H1/24
代理机构 代理人
主权项
地址