| 摘要 |
Provided is a method for forming low resistance metal films in which an underlying film, for example, a barrier layer or an adhesion layer, is formed on a semiconductor substrate. The underlying film is then subjected to a partial etch back in order to reduce the surface roughness and form a deposition surface. A metal film, for example, a tungsten film, is then formed on a deposition surface that has been formed on the underlying film. Forming the metal film on the deposition surface that has reduced surface roughness will tend to produce a metal film having a larger average grain size and, consequently, a lower sheet resistivity for a given film thickness.
|
