| 摘要 |
A semiconductor device ( 10 ) such as a FinFET transistor of small dimensions is formed in a process that permits substantially uniform ion implanting ( 32 ) of a source ( 14 ) electrode and a drain ( 16 ) electrode adjacent to an intervening gate ( 18 ) and channel ( 23 ) connected via source/drain extensions ( 22, 24 ) which form a fin. At small dimensions, ion implanting may cause irreparable crystal damage to any thin areas of silicon such as the fin area. To permit a high concentration/low resistance source/drain extension, a sacrificial doping layer ( 28, 30 ) is formed on the sides of the fin area. Dopants from the sacrificial doping layer are diffused into the source electrode and the drain electrode using heat. Subsequently a substantial portion, or all, of the sacrificial doping layer is removed from the fin.
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