| 摘要 |
A semiconductor device is provided to improve endurance and stability with respect to a fabricating process such as heat treatment, etching, dicing, etc. or a variation of external surroundings by protecting the front and lateral surfaces of a semiconductor substrate by an insulation substrate of high strength. A pad electrode(3) is formed on a semiconductor substrate(1). A via hole penetrates the back surface of the semiconductor substrate to reach the pad electrode. A through electrode is formed in the via hole, electrically connected to the pad electrode. A conductive terminal(18) is formed on the back surface of the semiconductor substrate, electrically connected to the through electrode. The front and the lateral surfaces of the semiconductor substrate is coated with an insulation substrate(6). An adhesion layer(8) is formed between the insulation substrate and the semiconductor substrate, made of adhesive. |
