| 摘要 |
<p>A method for forming a semiconductor device is provided to improve a processing margin and to increase effectively the length of a channel by using a double bulb type recessed gate portion. An isolation layer for defining an active region(120) is formed on a semiconductor substrate(100). A bulb type recessed gate portion(150,160) is formed within a gate forming portion of the active region. An expanded recessed gate portion(170,180) is formed under the bulb type recessed gate portion by etching. At this time, double bulb type recessed gate portion is completed in the resultant structure, so that the length of a channel portion is remarkably increased.</p> |
