| 摘要 |
<p>A wafer mark forming method is provided to prevent a storage node electrode material from remaining on a wafer mark under a capacitor oxide removing process and to omit a POM(Peri-Open Mask) process. An etch stop layer(120) and a storage node oxide layer are formed on a semiconductor substrate(100) with a storage node contact(110). A storage node electrode region is formed by etching selectively the storage node oxide layer and the etch stop layer. A storage node electrode layer(140) is formed on the entire surface of the resultant structure. A storage node electrode is formed on the resultant structure by performing an etch-back process on the storage node electrode layer. A wafer mark with the same structure as a cell region is formed on the resultant structure by removing the storage node oxide layer therefrom.</p> |
