| 摘要 |
A transistor of a semiconductor device is provided to increase the quantity of operation current in the same area by increasing an active region without varying the area of a chip. An active region is defined by an isolation layer(33). A line/space pattern two-dimensionally extended in the right-and-left direction is formed from the upper part to the lower part of a transistor of a semiconductor device. The right and the left edges of the line pattern are extended in mutually connected upper and lower parts. A trench(37) is formed in the line pattern region in a cross-sectional structure and the trench is buried by a gate structure(41) to form a gate. Impurities are implanted into the space pattern to form a source/drain region(43) including an ohmic contact(45). The gate overlaps the isolation layer positioned in a boundary of the active region, including a gate insulation layer in an interface of the active region.
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