| 摘要 |
A method for fabricating a silicon floating structure using a cross-bonded SOI wafer is provided to guarantee a gap of at least 50 microns between a silicon structure and a lower handling wafer by embodying a silicon structure by a DRIE(deep reactive ion etching) process performed on a process wafer and by protecting the sidewall surface of the silicon structure by an oxide layer. Each oxide layer is grown on a process wafer(11) and a handling wafer(12). The process wafer is bonded to the handling wafer. The process wafer is adjusted in thickness according to the thickness of a silicon structure to be fabricated. A mask is deposited on the upper surface of the process wafer. A photolithography process is performed to generalize a pattern. A PR(photoresist) pattern is used to pattern a mask. The process wafer is etched by the patterned mask to define the silicon structure. An oxide layer is grown to protect the sidewall surface of the silicon structure. A silicon oxide layer(14) exposed by etching the silicon structure is removed. The handling wafer is etched to float the silicon structure. The oxide layer surrounding the silicon structure is removed. The mask has sufficient selectivity and thickness so that the process wafer and the silicon oxide layer can be etched by a DRIE process.
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