| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device for transferring and forming a wiring layer on a temporary substrate on a semiconductor substrate without generation of any defect, and for stably removing the temporary substrate from the semiconductor substrate. SOLUTION: An ultraviolet ray irradiation peeling type bonding layer 12 is formed on the temporary substrate 10, and a wiring layer 3 provided with a connecting part 26 at the highest part is formed on the ultraviolet ray irradiation peeling type bonding layer 12. Thereafter, the connecting part 26 of a wiring layer 3 on the temporary substrate 10 is joined with a connecting part 38 of the semiconductor substrate 30 where a semiconductor circuit is formed. Moreover, the ultraviolet ray irradiation peeling type bonding layer 12 and the temporary substrate 10 are peeled for removal by radiating the ultraviolet ray to the ultraviolet ray irradiation peeling type bonding layer 12 from the side of temporary substrate 10. COPYRIGHT: (C)2007,JPO&INPIT |
