| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that neither unfavorably affects electrical characteristics in a semiconductor device island region nor cracks a LP-TEOS film, when the LP-TEOS oxide film is filled in a trench of a high aspect ratio and a dielectric isolation structure is formed by annealing, after a functional region is formed in the semiconductor island region in a semiconductor substrate of SOI structure. SOLUTION: The method for manufacturing the semiconductor device comprises a step of forming trenches on an insulating film from the surface of a semiconductor layer between regions, after a plurality of semiconductor functional regions are formed on the semiconductor layer of the SOI semiconductor substrate formed with the semiconductor layer on the semiconductor substrate through the insulating film; and a step of keeping a furnace put-in/out temperature at 650 to 800°C when the post-annealing in a range of 850 to 950°C is performed after the LP-TEOS oxide film is filled. A temperature rising/lowering velocity between the furnace put-in/out temperature and the post-annealing temperature is set at 3 to 4°C/min. COPYRIGHT: (C)2007,JPO&INPIT
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