| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of a multilayer wiring structure which has an insulating film of low specific inductive capacity and can restrain deterioration of electrical performance and deterioration of reliability, and to provide its manufacturing method. SOLUTION: The device has a semiconductor substrate, an insulating film formed on the semiconductor substrate and a wiring formed inside the insulating film. The insulating film is constituted of a first insulating film positioned immediately below the wiring, and a second insulation film positioned in other parts. The carbon concentration of a surface layer positioned in a boundary surface between the first insulating film and the second insulating film is higher than the carbon concentration of the inside of the first insulating film. COPYRIGHT: (C)2007,JPO&INPIT
|
