| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a full depletion type SOI transistor, which can suppress SOI layer film thickness dependency of a threshold while preventing a parasitic channel when the threshold is controlled with concentration of impurities to be doped into a channel forming portion, in the full depletion type SOI transistor, especially, an NMOS transistor. SOLUTION: A channel forming process in the method of manufacturing the full depletion type SOI transistor, especially, the NMOS transistor has a process of forming an insulation film on a thin film, a process of forming an additional insulation film for the insulation film, and a process of implanting first conductive type impurities into a part near an interface between a semiconductor thin film and the insulation film. COPYRIGHT: (C)2007,JPO&INPIT
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