发明名称 Layout generation and optimization to improve photolithographic performance
摘要 Disclosed are a system and method for designing a mask layout. In one example, the method includes representing the mask layout using a plurality of pixels, each having a mask transmittance coefficient. A control parameter is initialized and a representative of the mask layout is generated. The method determines acceptance of the representative of the mask layout by a cost function and a Boltzmann factor, where the cost function is related to the mask layout and a target substrate pattern, and the Boltzmann factor is related to the cost function and the control parameter. The methods repeats the steps of generating the representative and determining acceptance until the mask layout is stabilized. The control parameter is decreased according to an annealing schedule. The generating, determining, repeating, and decreasing steps are reiterated until the mask layout is optimized.
申请公布号 US2007028206(A1) 申请公布日期 2007.02.01
申请号 US20050193133 申请日期 2005.07.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHOU SHOU-YEN;SHIN JAW-JUNG;GAU TSAI-SHENG;LIN BURN J.
分类号 G06F17/50 主分类号 G06F17/50
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