SELF-ADAPTIVE PROGRAM DELAY CIRCUITRY FOR PROGRAMMABLE MEMORIES

摘要

A self-adaptive programming circuit (150, 160, 173, 170, 175, 154, 103) for EEPROM (Fig. 2) is used to automatically tune an erase or write delay, providing an improved programming window. The programming circuit may also provide improvements in data retention for programmed memory cells. The invention can be applied more particularly in the field of EEPROM memories capable of page mode writing operations.