| 摘要 |
A full-wafer probe card is disclosed along with related methods and systems. The probe card includes test probes comprising cantilever elements configured and arranged with probe tips in a pattern corresponding to an array of bond pads of semiconductor dice residing on a device wafer. The probe card may be fabricated from, for example, a silicon substrate and the cantilever elements may be fabricated using known silicon micro-machining techniques including isotropic and anisotropic etching. Additionally, conductive feedthroughs or vias are formed through the probe card to electrically connect the probe tips with conductive pads on an opposing side of the substrate which interface with test contacts of external test circuitry. The conductive feedthroughs may be formed as coaxial structures, which help to minimize stray capacitance and inductance. The inventive probe card allows for improved wafer level burn-in and high frequency testing.
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