发明名称 |
Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing |
摘要 |
A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
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申请公布号 |
US7169253(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20040909764 |
申请日期 |
2004.08.02 |
申请人 |
AKRION TECHNOLOGIES, INC. |
发明人 |
CHEN GIM-SYANG;KASHKOUSH ISMAIL;NOVAK RICHARD |
分类号 |
C23F1/00;B08B3/12;B08B7/00;B08B7/02;G03F;G03F7/42;H01L21/306 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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