| 发明名称 |
FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES, AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION |
| 摘要 |
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near- ultraviolet light emitting diodes and laser diodes. ® KIPO & WIPO 2007
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| 申请公布号 |
KR20070013320(A) |
申请公布日期 |
2007.01.30 |
| 申请号 |
KR20067025431 |
申请日期 |
2006.12.01 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CHAKRABORTY ARPAN;HASKELL BENJAMIN A.;KELLER STACIA;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI;MISHRA UMESH K. |
| 分类号 |
H01L21/205;H01L29/15;H01L29/20;H01L31/0312;H01L33/00;H01S5/02;H01S5/343 |
主分类号 |
H01L21/205 |
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