发明名称 METHOD OF FORMING A RECESSED STRUCTURE EMPLOYING A REVERSE TONE PROCESS
摘要 <p>The present invention provides a method of forming recesses on a substrate, the method including forming on the substrate a patterning layer having first features; trim etching the first features to define trimmed features having a shape; and transferring an inverse of the shape into the substrate. ® KIPO & WIPO 2007</p>
申请公布号 KR20070013305(A) 申请公布日期 2007.01.30
申请号 KR20067024158 申请日期 2005.05.19
申请人 MOLECULAR IMPRINTS, INC. 发明人 SREENIVASAN SIDLGATA V.
分类号 H01L21/027;H01L21/461;H01L21/4763;H01L21/768 主分类号 H01L21/027
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