METHOD OF MANUFACTURING A VARIABLE RESISTANCE AND METHOD OF MANUFACTURING A PHASE CHANGEABLE MEMORY DEVICE USING THE SAME

摘要

A method for fabricating a variable resistor structure is provided to control generation of seams or voids caused by CMP process in a pad or a first electrode by performing a dry etch process on the pad of the first electrode. A first insulation layer is formed on a substrate having a contact region. A contact hole is formed in the first insulation layer to expose the contact region. A first conductive layer is formed on the first insulation layer, filling the contact hole. A first passivation layer pattern is formed on the conductive layer. The first conductive layer is partially etched to form a contact in contact with the contact region while a pad is formed on the contact. A second insulation layer is formed to surround the first passivation layer pattern and the pad. A second passivation layer is formed on the first passivation layer pattern. An opening for exposing the pad is formed in the second passivation layer and the first passivation layer pattern. A first electrode is formed on the pad to fill the opening. A phase change material layer pattern is formed on the first electrode and the second passivation layer. A second electrode is formed on the phase change material layer pattern.