DRAM DEVICE HAVING CAPACITORS AND FABRICATION METHOD THEREOF

摘要

A DRAM device having capacitors is provided to laterally increase the effective surface area of a storage node electrode by disposing storage node electrodes in two layers. A first interlayer dielectric(125) is disposed on a semiconductor substrate(100). A first storage node contact plug(127) penetrates the first interlayer dielectric. A first storage node electrode(129) is disposed on the first interlayer dielectric, electrically connected to the first storage node contact plug. A first dielectric layer(131) is conformally disposed on the semiconductor substrate having the first storage node electrode. A first upper electrode(133) is disposed on the first dielectric layer. A second interlayer dielectric(135) is disposed on the first upper electrode. A second storage node contact plug(141) penetrates the second interlayer dielectric, the first upper electrode, the first dielectric layer and the first interlayer dielectric. A second storage node electrode(143) is disposed on the second interlayer dielectric, electrically connected to the second storage node contact plug. The second storage node electrode overlaps at least a part of the first storage node electrode. A second dielectric layer(145) is disposed on the semiconductor substrate having the second storage node electrode. A second upper electrode(147) is disposed on the second dielectric layer.