| 摘要 |
<p>A method for forming a thin film is provided to transform an ablation layer into a sacrificial layer and separate the ablation layer by irradiating a laser beam to the ablation layer. A source electrode(51s) and a drain electrode(51d) are installed in a device-side substrate(10A). A semiconductor layer(61g) is formed by a laser process, coming in contact with the source electrode and the drain electrode. A gate insulation layer is formed which overlaps the semiconductor layer. A gate electrode is formed which overlaps the gate insulation layer. The process for forming the semiconductor layer includes the following steps. A first donor substrate including a first base substrate(31), a first ablation layer(41) and a donor-side semiconductor layer overlaps the device-side substrate. A first laser beam is irradiated to the first ablation layer so that at least a part of the donor-side semiconductor layer is transcribed from the first donor substrate to the device-side substrate to form the semiconductor layer.</p> |
