发明名称 Semiconductor device
摘要 A technology for easily forming a multi-layer wiring structure that is fine and reliable. In the multi-layer wiring structure, the lower-layer wiring and the upper-layer wiring that are formed to sandwich an insulating layer are electrically connected to each other in a projection formed in the lower-layer wiring. The projection includes a columnar conductive member and the upper and lower layers thereof and each of the lower layer and the upper layer is formed of a conductive layer formed over the entire lower-layer wiring. The upper-layer is electrically connected to the lower-layer wiring in the portion where the projection is exposed substantially on the same plane as the top surface of the insulating layer.
申请公布号 US7170176(B2) 申请公布日期 2007.01.30
申请号 US20040976882 申请日期 2004.11.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ISHIKAWA AKIRA;YAMAGUCHI TETSUJI
分类号 H01L21/3205;H01L23/52;G02F1/1362;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/417 主分类号 H01L21/3205
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