| 摘要 |
Current consumption in a nonvolatile memory apparatus operable on two or more different power voltages is to be substantially reduced in its standby mode. A stepped-down power supply unit provided in a flash memory to generate an internal power voltage, when supplied from outside with about 3.3 V as a power voltage, causes a first stepped-down power supply circuit to output the internal power voltage to control circuits when in normal operation. In a low power consumption mode, a second stepped-down power supply circuit outputs the internal power voltage to the control circuits, and in a standby mode a third stepped-down power supply circuit outputs to the control circuits an internal power voltage stepped down by an N-channel MOS transistor.
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