发明名称 |
MRAM cell with reduced write current |
摘要 |
A magnetic random access memory (MRAM) cell that includes an MRAM stack and a conductive line for carrying write current associated with the MRAM cell. The conductive line is oriented in a direction that is angularly offset from an easy axis of the MRAM stack by an acute angle, such as about 45 degrees.
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申请公布号 |
US7170775(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20050030453 |
申请日期 |
2005.01.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN WEN CHIN;TANG DENNY D.;LAI LI-SHYUE |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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