发明名称 |
Semiconductor memory device and module for high frequency operation |
摘要 |
The present invention relates to a synchronous semiconductor memory device with double data rate, and more particularly, to a synchronous semiconductor memory device for inputting and outputting data using a free-running clock and inserting a preamble indicative of start of data into the outputted data. A semiconductor memory device of the present invention receives a data read command from the exterior of the memory device in response to a predetermined clock signal inputted from the exterior, and outputting data including a preamble in response to the clock signal.
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申请公布号 |
US7170818(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20040894823 |
申请日期 |
2004.07.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KYUNG KYE-HYUN |
分类号 |
G06F12/00;G11C8/00;G11C7/10;G11C11/407 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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