发明名称 Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives
摘要 A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.
申请公布号 US7169531(B2) 申请公布日期 2007.01.30
申请号 US20040974726 申请日期 2004.10.28
申请人 AZ ELECTRONIC MATERIALS USA CORP. 发明人 HOHLE CHRISTOPH;DAMMEL RALPH;HOULIHAN MICHAEL FRANCIS
分类号 G03F7/004;C08F32/00;G03C1/492;G03F7/039;G03F7/30 主分类号 G03F7/004
代理机构 代理人
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