发明名称 |
Photoresist suitable for use in 157 nm photolithography and including a polymer based on fluorinated norbornene derivatives |
摘要 |
A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.
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申请公布号 |
US7169531(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20040974726 |
申请日期 |
2004.10.28 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
HOHLE CHRISTOPH;DAMMEL RALPH;HOULIHAN MICHAEL FRANCIS |
分类号 |
G03F7/004;C08F32/00;G03C1/492;G03F7/039;G03F7/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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