发明名称 FARADAY SYSTEM AND ION IMPLANTER USED SAME
摘要 A faraday system and an ion implanter using the same are provided to improve the yield by preventing the contamination of a wafer using a rotatable housing structure with a plurality of holes. A faraday system is used for detecting the dose of ions by measuring the current of an ion beam. The faraday system includes a faraday cup(112) for collecting the ion beam and generating a corresponding current, a restraint electrode, and a housing. The restraint electrode(114) generates an electric field at a periphery of an inlet of the faraday cup to prevent the emission of secondary electrons due to the collected ion beam. The housing(116) encloses the restraint electrode and the faraday cup. The housing includes a plurality of holes capable of passing selectively the ion beam according to the kind of the collected ion beam. The housing is rotated to rotate the holes in one direction.
申请公布号 KR100679263(B1) 申请公布日期 2007.01.30
申请号 KR20050088151 申请日期 2005.09.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, BYUNG HYUN
分类号 H01L21/265 主分类号 H01L21/265
代理机构 代理人
主权项
地址