发明名称 |
Method for forming a dual damascene structure |
摘要 |
A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewalls of the vias and etching a trench through the trench patterned mask. The mask is then stripped.
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申请公布号 |
US7169695(B2) |
申请公布日期 |
2007.01.30 |
申请号 |
US20030674675 |
申请日期 |
2003.09.29 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HUANG ZHISONG;LI LUMIN;SADJADI REZA |
分类号 |
H01L21/4763;H01L21/302;H01L21/311;H01L21/461;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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