发明名称 Method for forming a dual damascene structure
摘要 A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewalls of the vias and etching a trench through the trench patterned mask. The mask is then stripped.
申请公布号 US7169695(B2) 申请公布日期 2007.01.30
申请号 US20030674675 申请日期 2003.09.29
申请人 LAM RESEARCH CORPORATION 发明人 HUANG ZHISONG;LI LUMIN;SADJADI REZA
分类号 H01L21/4763;H01L21/302;H01L21/311;H01L21/461;H01L21/768 主分类号 H01L21/4763
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