发明名称 |
Non-conductive barrier formations for copper damascene type interconnects |
摘要 |
A method for forming dual-damascene type conducting interconnects with non metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation. Fig 7
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申请公布号 |
SG128478(A1) |
申请公布日期 |
2007.01.30 |
申请号 |
SG20040005712 |
申请日期 |
2001.02.16 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
CHOOI SIMON;GUPTA SUBHASH;ZHOU MEI-SHENG;HONG SANGKI |
分类号 |
H01L21/4763;H01L21/768 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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