SEMICONDUCTOR OPTICAL EMITTING DEVICE AND FABRICATION METHOD THE SAME
摘要
A semiconductor light emitting device and its manufacturing method are provided to improve a light emitting efficiency and to enhance temperature characteristics by forming an upper clad layer using two-step epitaxial growing processes under different temperature conditions. A first DBR(Distributed Brag Reflector)(220) doped with N type ions is formed on a substrate(210). A lower clad layer(230) is formed on the first DBR. A light emissive active layer(240) is formed on the lower clad layer. A first upper clad layer is formed on the light emissive active layer in a first growth temperature range. A second upper clad layer is formed on the first upper clad layer in a second growth temperature range. A delta doping layer is formed on the second upper clad layer.
申请公布号
KR100679235(B1)
申请公布日期
2007.01.30
申请号
KR20060014894
申请日期
2006.02.16
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE