METHOD OF MANUFACTURING NON-VOLATILE MEMORY CELL

摘要

A method for fabricating an NVM(non-volatile memory) cell is provided to minimize the interference effect between adjacent memory cells by forming a spacer in a gate structure including a tungsten pattern such that the spacer includes a middle temperature oxide layer having a lower dielectric constant than that of a nitride layer. A gate structure of a non-volatile memory is formed on a substrate(100), including a tungsten pattern. A middle temperature oxide layer for a spacer is formed on the lateral and upper surfaces of the gate structure and the surface of the substrate by using SH2Cl2 gas and N2O gas, having a lower dielectric constant than that of a nitride layer. A floating gate, a dielectric layer pattern and a control gate including a tungsten pattern are sequentially stacked in the gate structure. A polysilicon layer and a tungsten layer are stacked in the control gate.