| 摘要 |
FIELD: metallurgy, crystal growing. ^ SUBSTANCE: invention refers to facilities for growing mono-crystals of high melting oxides and can be implemented, for example, for growing mono-crystals of sapphire or garnet. The facility for growing mono-crystals of high melting oxides contains a growth chamber connected with a loading section, between which a container travels; also the facility contains a heating system installed inside the growth chamber in form of upper and lower sections and a system of heat screens. The facility is designed in form of two separate working blocks - a crystallization block and a receiving block, mechanically joined between them; the growth chamber of the crystallisation block is made in form of a horizontally located cylinder with two end folding covers opening access to the heating system and to the system of heat screens; the loading section in form of an oval shape pipe with an end cover is connected to the side surface of the growth chamber; the lower section of the heating system has a shape of a box, while the upper section is made flat; outputs of the heating sections go off in contrary directions; opposite the loading section from the opposite side of the growth chamber there is made an interfacing flange used for connection with the flange of the receiving block; the receiving block is assembled on a separate support and contains a receiving section with a mechanism of container transfer, it also contains a device facilitating a turn and a linear transfer of the receiving section against the interfacing flange of the growth chamber of the crystallisation block; guiding rollers are assembled inside the growth chamber of the crystallisation block facilitating container transfer. ^ EFFECT: designing simple and reliable in operation facility for growing mono-crystals of high melting oxides. ^ 9 cl, 4 dwg |
