| 摘要 |
A method of manufacturing a semiconductor device is provided to fill an inter-metal dielectric in a gap between adjacent spacers by reducing width of the spacers by forming an auxiliary insulating layer for limiting regions where the spacers will be disposed, on an active region of a semiconductor substrate. A gate insulating layer(60) is formed on a semiconductor substrate(100) having an isolation layer(50). A gate electrode(70) is formed on the gate insulating layer. A lightly doped region is formed in the substrate. An auxiliary insulating pattern is formed on the lightly doped region of the substrate. A spacer insulating layer is formed on the entire surface of the resultant structure. A spacer(113) and a nitride protection layer(115) are selectively formed on the resultant structure by performing an etch back process on the spacer insulating layer. The auxiliary insulating layer is removed therefrom. Then, a heavily doped region is formed in the substrate.
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