RESIST PATTERN, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a material or the like that can reduce the thickness of a resist pattern. SOLUTION: A resist pattern thinning material is provided which comprises at least one kind selected from water-soluble resins and alkali-soluble resins. A method for manufacturing a resist pattern includes a step of applying the resist pattern thinning material to cover the surface of a formed resist pattern to form a mixing layer with the resist pattern thinning material on the surface of the resist pattern. A method for manufacturing a semiconductor device includes a step of applying the resist pattern thinning material to cover the surface of a resist pattern formed on a base layer to form a mixing layer with the resist pattern thinning material on the surface of the resist pattern and developing to form a thinned resist pattern, and a step of patterning the base layer by etching using the resist pattern as a mask. COPYRIGHT: (C)2007,JPO&INPIT