| 摘要 |
PROBLEM TO BE SOLVED: To provide nanowires which are useful as an electronic device or an optical device, and coated with chemically inert silica films, and has Ga nanowires and ZnS nanowires joined to each other, and to provide a method for manufacturing the nanowires. SOLUTION: The nanowires are constituted so that Ga nanowires and ZnS nanowires are joined to each other by heating a mixture of ZnS powder, Ga<SB>2</SB>O<SB>3</SB>powder and SiO powder in an inert gas flow in a temperature range of 1,400 to 1,500°C for 1 to 2 hours, wherein the obtained nanowires are coated with silica films of 4 to 8 nm thickness. The nanowires produced by joining Ga nanowires and ZnS nanowires have diameters of 150 to 250 nm and length of severalμm to several tensμm. COPYRIGHT: (C)2007,JPO&INPIT
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