发明名称 Magnetoresistive device, thin film magnetic head, head gimbals assembly, head arm assembly, magnetic disk apparatus, synthetic antiferromagnetic magnetization pinned layer, magnetic memory cell, and current sensor
摘要 An MR device includes a magnetization pinned film having a nonmagnetic intermediate layer positioned on the opposite side of a magnetization free layer while sandwiching a nonmagnetic spacer layer and made of RuCu. In the case of passing read current in the stacking direction via lower and upper electrodes, decrease in a resistance change amount caused by a second magnetization pinned layer can be suppressed. Further, a first magnetization pinned layer and the second magnetization pined layer which are thicker can be antiferromagnetically coupled to each other in magnetic fields in a wider range. Thus, both increase in the resistance change amount and magnetic field stability can be achieved. Therefore, while maintaining stable operations by reducing the influence of external noise, the invention can address higher recording density by the increase in the resistance change amount as a whole.
申请公布号 US2007019341(A1) 申请公布日期 2007.01.25
申请号 US20060490112 申请日期 2006.07.21
申请人 TDK CORPORATION 发明人 MIZUNO TOMOHITO;MIYAUCHI DAISUKE
分类号 G11B5/33;G11B5/127 主分类号 G11B5/33
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