METHOD FOR OXIDE FILM FORMATION, SEMICONDUCTOR DEVICE COMPRISING THE OXIDE FILM, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE

摘要

[PROBLEMS] To provide a method for modifying a deposited oxide film on the surface of a semiconductor substrate to a high-quality and high-performance form. [MEANS FOR SOLVING PROBLEMS] A silicon dioxide film (2) was formed on a silicon substrate (1) to be treated. The silicon substrate (1) and the silicon dioxide film (2) are immersed, e.g., in an azeotropic nitric acid (boiling point 120.7ºC, concentration 68% by mass) (4) within a treatment tank (3) for about one hr, or exposed to an oxidizing vapor, whereby a silicon dioxide film having properties comparable favorably with properties of a silicon dioxide film formed by conventional high-temperature thermal oxidation can easily be formed on the surface of the silicon substrate (1).