| 摘要 |
<P>PROBLEM TO BE SOLVED: To simplify a process for forming multilayer Cu interconnect wiring employing a dual-Damascene method. <P>SOLUTION: An interlayer insulating film 45 is dry-etched using a photoresist film 51 formed thereon as a mask and wiring trenches 52 and 53 are formed by stopping the etching on the surface of a stopper film 46 formed in a halfway portion of the interlayer insulating film 45. The stopper film 46 is composed of an SiCN film having low light reflectivity and since the photoresist film 51 functions as an antireflection film during exposure, a process for forming an antireflection film underlying the photoresist film 51 can be eliminated. <P>COPYRIGHT: (C)2007,JPO&INPIT |
