| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem wherein a substrate becomes large, and newly found polishing remainder is produced. <P>SOLUTION: A method of manufacturing a semiconductor device includes processes (a), (b), and (c). In the process (a), a first abrasive, which contains a cerium dioxide abrasive grain, and an additive made of a surface-active agent, is supplied onto a polishing table on which a polishing pad is provided, and at the same time the polishing pad is used to polish the surface of a film to be polished formed on a semiconductor substrate supported by a polishing head until the surface of the film to be polished is flattened. In the process (b), a second abrasive having a physical polishing function is used to polish the surface of the film to be polished after the process (a). In the process (c), a third abrasive, which contains a cerium dioxide abrasive grain, an additive made of a surface-active agent, and a diluent, is used to polish the surface of the film to be polished. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
