发明名称 METHOD AND APPARATUS OF MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a semiconductor whereby the variations of the concentrations of sulfuric acid and HF can be prevent in an SFM processing. SOLUTION: The method has: a step for carrying a semiconductor substrate 1 in an inner vessel 2a for processing to which a mixed liquid 3 comprising sulfuric acid, HF, and H<SB>2</SB>O is fed; a step for disposing the inner vessel 2a for processing in an enclosed space 6; and a step for bringing the enclosed space 6 into an HF-volatilization-resistant atmosphere and/or a drying atmosphere. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007019405(A) 申请公布日期 2007.01.25
申请号 JP20050201749 申请日期 2005.07.11
申请人 TOSHIBA CORP 发明人 OGUCHI HISASHI;IIMORI HIROYASU
分类号 H01L21/306 主分类号 H01L21/306
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