| 发明名称 |
Method of manufacturing gate structure and method of manufacturing semiconductor device including the same |
| 摘要 |
In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.
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| 申请公布号 |
US2007020841(A1) |
申请公布日期 |
2007.01.25 |
| 申请号 |
US20060490154 |
申请日期 |
2006.07.21 |
| 申请人 |
HWANG KI-HYUN;JANG WON-JUN;AHN JAE-YOUNG;MUN CHANG-SUP;PARK JUNG-HYUN |
发明人 |
HWANG KI-HYUN;JANG WON-JUN;AHN JAE-YOUNG;MUN CHANG-SUP;PARK JUNG-HYUN |
| 分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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