发明名称 |
Non-volatile memory cells and methods for fabricating non-volatile memory cells |
摘要 |
The invention relates to a method for fabricating stacked non-volatile memory cells. Further, the invention relates to stacked non-volatile memory cells. The invention particularly relates to the field of non-volatile NAND memories having non-volatile stacked memory cells. The stacked non-volatile memory cells are formed on a semiconductor wafer, having a bulk semi-conductive substrate and an SOI semi-conductive layer and are arranged as a bulk FinFET transistor and an SOI FinFet transistor being arranged on top of the bulk FinFET transistor. Both the FinFET transistor and the SOI FinFet transistor are attached to a common charge-trapping layer. A word line with sidewalls is arranged on top of said patterned charge-trapping layer and a spacer oxide layer is arranged on the sidewalls of said word line.
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申请公布号 |
US2007018201(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
US20050187693 |
申请日期 |
2005.07.22 |
申请人 |
SPECHT MICHAEL;HOFMANN FRANZ;LUYKEN JOHANNES |
发明人 |
SPECHT MICHAEL;HOFMANN FRANZ;LUYKEN JOHANNES |
分类号 |
H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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