VERTICALLY STRUCTURED GAN TYPE LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A vertical GaN based light emitting diode and a manufacturing method thereof are provided to intensify ESD(ElectroStatic Discharge) characteristics without the degradation of brightness by using a PN junction structural substrate instead of a structure support layer. A vertical GaN based light emitting diode includes a PN junction structural substrate(470), a P type electrode(450) on the substrate, a P type GaN layer(440) on the P type electrode, an active layer(430) on the P type GaN layer, an N type GaN layer(420) on the active layer and an N type contact(410) on the N type GaN layer. The substrate is composed of a P type substrate and an N type substrate.