METHODS OF FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to uniformly distribute impurity elements in a three-dimensional structure like a channel region or a source drain region by isotropically doping the three-dimensional structure by a plasma doping process using first source gas including n-type or p-type impurity element and second source gas including dilution elements unrelated to an electrical characteristic of a doping region. A three-dimensional structure of a semiconductor is formed on a semiconductor substrate. A plasma doping process is performed to isotropically dope the three-dimensional structure, using first source gas including n-type or p-type impurity element and second source gas including dilution elements unrelated to an electrical characteristic of a doping region(S170). The process for forming the three-dimensional structure includes a process for forming a pin protruding upward from the semiconductor substrate wherein the pin includes a channel region and is the three-dimensional structure.